Embedded bridge substrate having an integral device

ABSTRACT

Microelectronic assemblies, related devices, and methods are disclosed herein. In some embodiments, a microelectronic assembly may include a package substrate; a bridge, embedded in the package substrate, wherein the bridge includes an integral passive component, and wherein a surface of the bridge include first contacts in a first interconnect area and second contacts in a second interconnect area; a first die coupled to the passive component via the first contacts in the first interconnect area; and a second die coupled to the second contacts in the second interconnect area.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a divisional (and claims the benefit of priorityunder 35 U.S.C. § 120) of U.S. application Ser. No. 16/446,920, filedJun. 20, 2019, and entitled EMBEDDED BRIDGE SUBSTRATE HAVING AN INTEGRALDEVICE. The disclosure of the prior application is considered part ofand is incorporated by reference in the disclosure of this Application.

BACKGROUND

Integrated circuit (IC) packages may include an embedded bridge, such asan embedded multi-die interconnect bridge (EMIB), for coupling two ormore IC dies, and other devices, such as capacitors and resistors, formanaging power delivery to IC dies. Typically, IC packages may includedevices surface-mounted on a backside of a die or on a land side of acircuit board.

BRIEF DESCRIPTION OF THE DRAWINGS

Embodiments will be readily understood by the following detaileddescription in conjunction with the accompanying drawings. To facilitatethis description, like reference numerals designate like structuralelements. Embodiments are illustrated by way of example, not by way oflimitation, in the figures of the accompanying drawings.

FIG. 1 is a side, cross-sectional view of an example microelectronicassembly, in accordance with various embodiments.

FIG. 2A is a top, transparent view of example interconnect areas of amicroelectronic assembly, in accordance with various embodiments.

FIGS. 2B and 2C are side, cross-sectional views of example interconnectareas of the microelectronic assembly of FIG. 2A, in accordance withvarious embodiments.

FIG. 3A is a top, transparent view of an example microelectronicassembly, in accordance with various embodiments.

FIG. 3B is a side, cross-sectional view of the example microelectronicassembly of FIG. 3A, in accordance with various embodiments.

FIG. 3C is a top, transparent view of example interconnects of a die ofthe microelectronic assembly of FIG. 3A, in accordance with variousembodiments.

FIG. 4A is a side, cross-sectional view of an example microelectronicassembly, in accordance with various embodiments.

FIG. 4B is a top, transparent view of example interconnects of theexample microelectronic assembly of FIG. 4A, in accordance with variousembodiments.

FIG. 5 is an example architecture of a microelectronic assembly, inaccordance with various embodiments.

FIG. 6 is another example architecture of a microelectronic assembly, inaccordance with various embodiments.

FIG. 7A is a top, transparent view of an example microelectronicassembly, in accordance with various embodiments.

FIG. 7B is a side, cross-sectional view of the example microelectronicassembly of FIG. 7A, in accordance with various embodiments.

FIG. 8A is a perspective view of an example integral device in amicroelectronic assembly, in accordance with various embodiments.

FIG. 8B is a side, cross-sectional view of an example microelectronicassembly including the device of FIG. 8A, in accordance with variousembodiments.

FIG. 8C is a perspective, transparent view of example interconnects ofthe integral device of the microelectronic assembly of FIG. 8B, inaccordance with various embodiments.

FIGS. 9A and 9B are schematics of example architectures of amicroelectronic assembly, in accordance with various embodiments.

FIG. 10 is a top view of a wafer and dies that may be included in amicroelectronic assembly, in accordance with any of the embodimentsdisclosed herein.

FIG. 11 is a cross-sectional side view of an integrated circuit devicethat may be included in a microelectronic assembly, in accordance withany of the embodiments disclosed herein.

FIG. 12 is a cross-sectional side view of an integrated circuit deviceassembly that may include a microelectronic assembly, in accordance withany of the embodiments disclosed herein.

FIG. 13 is a block diagram of an example electrical device that mayinclude a microelectronic assembly, in accordance with any of theembodiments disclosed herein.

DETAILED DESCRIPTION

Disclosed herein are microelectronic assemblies including aninterconnect bridge having an integrated component, as well as relatedapparatuses and methods. For example, in some embodiments, amicroelectronic assembly may include a package substrate; a bridge,embedded in the package substrate, wherein the bridge includes a passivecomponent, and wherein a surface of the bridge includes first contactsin a first interconnect area and second contacts in a secondinterconnect area; a first die coupled to the passive component via thefirst contacts in the first interconnect area; and a second die coupledto the second contacts in the second interconnect area.

The drive for miniaturization of IC devices has created a similar driveto provide dense interconnections between dies in a package assembly.For example, interposers and bridges, such as EMIB architecture, areemerging to provide dense interconnect routing between dies or otherelectrical components. To increase the functionality of a packagesubstrate, an interposer or a bridge may be embedded in the packagesubstrate to route signals between one or more dies. Such interposersand bridges may take advantage of semiconductor processing techniques toform dense interconnect routing features. Passive components (alsoreferred to herein as “passive devices”), such as resistors and/orcapacitors, that improve IC device efficiency are generallyprefabricated and surface-mounted to a circuit board or a die, or may beembedded in the package substrate in a region separate from theinterconnect bridge region. Each of these components would have beenpurchased separately, and then separately assembled into the packagesubstrate, with each such component adding significant cost and processcomplexity.

Various ones of the embodiments disclosed herein provide resistorstructures for periodic and/or repetitive calibration and capacitorstructures for functionality fabricated directly into an interconnectbridge. Additionally, various ones of the embodiments disclosed hereinapply existing semiconductor processing techniques to fabricateresistors and capacitors on the same metal layer or on different metallayers (e.g., resistors may be formed at a surface of the interconnectbridge and capacitors may be embedded in a metal layer within theinterconnect bridge). Resistor structures disclosed herein may improvecalibration accuracy as compared with conventional methods. For example,a calibration may be performed when a die is between differentfunctional modes or is operating at different temperatures. As usedherein, calibration may refer to determining a current of a circuitbased on a known voltage and a known resistance, and/or may refer todetermining a number of transistors connected in parallel to achieve atarget resistance. In some embodiments, a calibration may be used todetermine whether to adjust an electrical parameter of a circuit. Forexample, a calibration may be used to adjust a voltage of a circuit tominimize power consumption. Capacitor structures disclosed herein mayreduce signal noise, including electromagnetic interference (EMI) and/orradio frequency interference (RFI), and may improve IC devicefunctionality.

The processes disclosed herein may be used to integrate a variety offunctionalities directly into an interconnect bridge, which mayeliminate or reduce the need to separately acquire prepackagedcomponents and may lower assembly costs. Relative to the higher cost ofembedding separate prefabricated devices in a package substrate, orfabricating resistors and capacitors directly in silicon, various onesof the embodiments disclosed herein may enable resistors and capacitorsto be formed inexpensively in an interconnect bridge. Such embodimentsmay be particularly advantageous in computing applications,system-in-package applications, and server applications (in whichcapacitors may be used in voltage regulators to meet a high demand forpower delivery). The embodiments disclosed herein may achieve improvedintegration of logic in IC packages by putting resistors and capacitorsin otherwise unavailable real estate in the package substrate,increasing functionality without increasing the z-height of the packages(and potentially reducing the z-height of packages by removingconventional “external” capacitors). This improvement in computingdensity may enable new form factors for wearable computing devices andsystem-in-package applications in which z-height is constrained.

In the following detailed description, reference is made to theaccompanying drawings that form a part hereof wherein like numeralsdesignate like parts throughout, and in which is shown, by way ofillustration, embodiments that may be practiced. It is to be understoodthat other embodiments may be utilized, and structural or logicalchanges may be made without departing from the scope of the presentdisclosure. Therefore, the following detailed description is not to betaken in a limiting sense.

Various operations may be described as multiple discrete actions oroperations in turn, in a manner that is most helpful in understandingthe claimed subject matter. However, the order of description should notbe construed as to imply that these operations are necessarily orderdependent. In particular, these operations may not be performed in theorder of presentation. Operations described may be performed in adifferent order from the described embodiment. Various additionaloperations may be performed, and/or described operations may be omittedin additional embodiments.

For the purposes of the present disclosure, the phrase “A and/or B”means (A), (B), or (A and B). For the purposes of the presentdisclosure, the phrase “A, B, and/or C” means (A), (B), (C), (A and B),(A and C), (B and C), or (A, B, and C). The drawings are not necessarilyto scale. Although many of the drawings illustrate rectilinearstructures with flat walls and right-angle corners, this is simply forease of illustration, and actual devices made using these techniqueswill exhibit rounded corners, surface roughness, and other features.

The description uses the phrases “in an embodiment” or “in embodiments,”which may each refer to one or more of the same or differentembodiments. Furthermore, the terms “comprising,” “including,” “having,”“with,” and the like, as used with respect to embodiments of the presentdisclosure, are synonymous. As used herein, a “package” and an “ICpackage” are synonymous, as are a “die” and an “IC die.” As used herein,the terms “bridge,” “interconnect bridge,” “EMIB,” and “interposer” maybe used interchangeably. The terms “top” and “bottom” may be used hereinto explain various features of the drawings, but these terms are simplyfor ease of discussion, and do not imply a desired or requiredorientation. As used herein, the term “insulating” means “electricallyinsulating,” unless otherwise specified. Throughout the specification,and in the claims, the term “coupled” means a direct connection, such asa direct electrical, mechanical, or magnetic connection between thethings that are connected, or an indirect connection, through one ormore passive or active intermediary devices. The meaning of “a,” “an,”and “the” include plural references. The meaning of “in” includes “in”and “on.”

When used to describe a range of dimensions, the phrase “between X andY” represents a range that includes X and Y. For convenience, the phrase“FIG. 2” may be used to refer to the collection of drawings of FIGS.2A-2C, the phrase “FIG. 3” may be used to refer to the collection ofdrawings of FIGS. 3A-3C, etc. Although certain elements may be referredto in the singular herein, such elements may include multiplesub-elements. For example, “an insulating material” may include one ormore insulating materials. As used herein, a “conductive contact” mayrefer to a portion of conductive material (e.g., metal) serving as anelectrical interface between different components; conductive contactsmay be recessed in, flush with, or extending away from a surface of acomponent, and may take any suitable form (e.g., a conductive pad orsocket, or portion of a conductive line or via).

FIG. 1 is a cross-sectional side view of a microelectronic assembly 100including a package substrate 102, a bridge 110 embedded in the packagesubstrate 102, and multiple dies 114 disposed thereon. The packagesubstrate 102 may have a first surface 170-1 and an opposing secondsurface 170-2. A surface of the bridge 110 may be flush with the secondsurface 170-2 of the package substrate 102. The bridge 110 may include asubstrate 111 a and one or more routing layers 111 b having high densityconductive pathways 118 (e.g., traces and/or vias) through an insulatingmaterial (e.g., a dielectric material formed in multiple layers) forrouting electrical signals between the dies 114-1, 114-2. In someembodiments, the bridge may include dielectric layers that alternatewith conductive trace layers. The bridge 110 may be made of any suitablematerial. For example, in some embodiments, the insulating material maybe a semiconductor material (e.g., silicon or germanium), a III-Vmaterial (e.g., gallium nitride), silicon oxide, or glass. Although theterm “insulating material” is used herein, different layers of theinsulating material in a bridge 110 may be formed of differentmaterials.

The bridge 110 may include one or more integral devices 112, inaccordance with various embodiments. In some embodiments, one or moreintegral devices 112 may be included in the substrate layer 111 a. Insome embodiments, one or more integral devices 112 may be included inthe routing layers 111 b. An integral device 112 may be a resistor or acapacitor. In some embodiments, the integral device 112 is a thin filmresistor (TFR) that may be use in the calibration of a circuit of a die114. As used herein, a TFR used for calibrating a circuit may bereferred to as a calibration TFR (cTFR). In some embodiments, theintegral device is a capacitor such as a trench capacitor, ametal-oxide-semiconductor (MOS) capacitor, a metal-insulator-metal (MIM)capacitor, or a parallel plate capacitor. In some embodiments, thebridge 110 may include features of an integral device 112 such that theintegral device is integrated in the bridge 110 during manufacturing. Insome embodiments, the integral devices 112 may be formed on the bridge110 using, for example, semiconductor manufacturing techniques. In someembodiments, the integral devices 112 may include routing structures(e.g., trenches and/or vias) formed using complementarymetal-oxide-semiconductor (CMOS) fabrication techniques such as thinfilm deposition, etch, and/or lithography processes. The techniques maybe similar to those used to fabricate back-end interconnect routing(e.g., trenches and/or vias) on a die.

The bridge 110 may include multiple integral devices 112 disposed at thesurface of the bridge 110, at different distances from the surface ofthe bridge 110 (i.e., in the z-direction), and at different laterallocations in the bridge 110 (e.g., in the x-direction). For example, thebridge 110 may include integral devices 112 between multiple sets oflayers of the insulating material in the bridge 110 and/or multipleintegral devices 112 on a single layer of the insulating material. Asnoted above, an integral device 112 may include one or more calibrationresistors and/or capacitors. A number of embodiments of resistors andcapacitors that may be included in the bridge 110 as integral devices112 are disclosed herein, and any of these embodiments may be includedin any suitable combination in a bridge 110. The bridge 110 may alsoinclude conductive pathways 115 through the insulating material thatcouple the integral devices 112 to the dies 114. Any suitablearrangement of conductive pathways 115, 118 may couple the dies 114 andthe integral devices 112, as desired. In some embodiments, theconductive pathways 115, 118 may be a metal, such as copper, or may be ametal alloy.

The dies 114 may be coupled to the second surface 170-2 of the packagesubstrate 102 via first level interconnects 108-1, 108-2, 108-3, asillustrated. The dies 114-1, 114-2 may be coupled to an integral device112 at the surface of the bridge 110 via the first level interconnects108, or may be coupled to an integral device 112 within the bridge 110via the first level interconnects 108 and the conductive pathways 115.In some embodiments, the first level interconnects 108 may includesolder bumps or balls (as illustrated in FIG. 1); in other embodiments,the first level interconnects 108 may include wirebonds or any othersuitable interconnect. Although three dies 114 are illustrated in FIG.1, this is simply an example, and the microelectronic assembly 100 mayinclude one or more dies 114. The dies 114 may perform any suitablefunctionality, and may include processing devices, memory,communications devices, sensors, or any other computing components orcircuitry. For example, the die 114 may be a central processing unit(CPU), a graphics processing unit (GPU), an application-specificintegrated circuit (ASIC), a programmable logic device (PLD), a platformcontroller hub (PCH), or any other desired processor or logic device. Amemory die, for example, may be an erasable-programmable read-onlymemory (EPROM) chip, a non-volatile memory (e.g., 3D XPoint) chip, avolatile memory (e.g., high bandwidth memory) chip, stacked memory, orany other suitable memory device. In some embodiments, the die 114 maybe an input/output (I/O) interface and may include I/O circuitry. Insome embodiments, the die 114 may be a voltage regulator and may includevoltage regulator circuitry. In some embodiments, one of the dies 114-1may be a PLD and the other die 114-2 may be a GPU. In some embodiments,the die 114-1 may be a CPU and the die 114-2 may be a memory die. Insome embodiments, the die 114-1 may be a CPU and the die 114-2 may be amemory die. In some embodiments, an underfill material (not shown) maybe disposed between the dies 114 and the second surface 170-2 of thepackage substrate 102. In some embodiments, an overmold material (notshown) may be disposed around the dies 114 and in contact with thesecond surface 170-2 of the package substrate 102.

The dies 114 disclosed herein may include an insulating material (e.g.,a dielectric material formed in multiple layers, as known in the art)and multiple conductive pathways formed through the insulating material.In some embodiments, the insulating material of a die 114 may include adielectric material, such as silicon dioxide, silicon nitride,oxynitride, polyimide materials, glass reinforced epoxy matrixmaterials, or a low-k or ultra low-k dielectric (e.g., carbon-dopeddielectrics, fluorine-doped dielectrics, porous dielectrics, organicpolymeric dielectrics, photo-imageable dielectrics, and/orbenzocyclobutene-based polymers). In some embodiments, the insulatingmaterial of a die 114 may include a semiconductor material, such assilicon, germanium, or a III-V material (e.g., gallium nitride), and oneor more additional materials. For example, an insulating material mayinclude silicon oxide or silicon nitride. The conductive pathways in adie 114 may include conductive traces and/or conductive vias, and mayconnect any of the conductive contacts in the die 114 in any suitablemanner (e.g., connecting multiple conductive contacts on a same surfaceor on different surfaces of the die 114). Example structures that may beincluded in the dies 114 disclosed herein are discussed below withreference to FIG. 13. The conductive pathways in the dies 114 may bebordered by liner materials, such as adhesion liners and/or barrierliners, as suitable.

The package substrate 102 may include conductive pathways 119 through aninsulating material. The conductive pathways 119 may couple the dies 114to a circuit board 104 (e.g., via the first level interconnects 108 andsecond level interconnects 109). Any suitable arrangement of conductivepathways 119 may couple the dies 114 to each other (e.g., a conductivepathway 117 coupling die 114-1 to a die 114-3) and the dies 114 to thecircuit board 104, as desired. The package substrate 102 may be anorganic substrate. For example, in some embodiments, the insulatingmaterial may be an organic material, such as an epoxy-based laminate.The insulating material may be, for example, a build-up film (e.g.,Ajinomoto build-up film). The insulating material may include, forexample, an epoxy with a phenolic hardener. The conductive pathways maybe made of any suitable conductive material, for example, copper.

The package substrate 102 may be coupled to the circuit board 104 viasecond level interconnects 109 at the first surface 170-1 of the packagesubstrate 102. In some embodiments, the second level interconnects 109may include solder balls (as illustrated in FIG. 1) for a ball gridarray (BGA) coupling; in other embodiments, the second levelinterconnects 109 may include solder paste contacts to provide land gridarray (LGA) interconnects, or any other suitable interconnect. Thecircuit board 104 may include conductive pathways (not shown) that allowpower, ground, and other electrical signals to move between the circuitboard 104 and the package substrate 102, as known in the art. AlthoughFIG. 1 illustrates a single package substrate 102 disposed on thecircuit board 104, this is simply for ease of illustration, and multiplepackage substrates 102 having one or more dies 114 (i.e., IC packages)may be disposed on the circuit board 104. In some embodiments, thecircuit board 104 may be a printed circuit board (PCB) (e.g., amotherboard). In some embodiments, the circuit board 104 may be anotherIC package, and the microelectronic assembly 100 may be apackage-on-package structure. In some embodiments, the circuit board 104may be an interposer, and the microelectronic assembly 100 may be apackage-on-interposer structure.

A number of elements are illustrated in FIG. 1, but a number of theseelements may not be present in microelectronic assemblies disclosedherein. For example, in various embodiments, the conductive pathways115, 118, 117, 119, the second level interconnects 109, and/or thecircuit board 104 may not be included. Further, FIG. 1 illustrates anumber of elements that are omitted from subsequent drawings for ease ofillustration, but may be included in any of the microelectronicassemblies disclosed herein. Examples of such elements include thesecond level interconnects 109 and/or the circuit board 104. Many of theelements of the microelectronic assembly 100 of FIG. 1 are included inother ones of the accompanying figures; the discussion of these elementsis not repeated when discussing these figures, and any of these elementsmay take any of the forms disclosed herein. A number of elements are notillustrated in FIG. 1, but may be present in microelectronicsubassemblies disclosed herein; for example, additional integral devices112; additional active components, such as additional dies; oradditional passive components, such as surface-mount resistors,capacitors, and/or inductors, may be disposed on the top surface or thebottom surface of the package substrate 102, or embedded in the packagesubstrate 102, and may be electrically connected by the conductivepathways in the package substrate 102.

FIG. 2A is a top, transparent view of a microelectronic assembly 100including a package substrate 102, a bridge 110 embedded in the packagesubstrate 102, and multiple dies 114 disposed thereon. The bridge 110may include different interconnect areas or regions 113, 116 forintegral devices 112 and for signal routing between dies 114,respectively, in accordance with various embodiments. For example, asshown in FIG. 2A, a surface of the bridge 110 may include first andsecond interconnect areas 113-1, 113-2 for coupling the integral devices112 in the bridge 110 to the dies 114-1, 114-2, respectively, and athird interconnect area 116 for conductive pathways 118 (e.g., signaltraces) between the dies 114-1, 114-2. Although FIG. 2 depicts twointerconnect areas or regions 113 for coupling to integral devices 112and one interconnect region 116 for conductive pathways 118 betweendies, these arrangements are simply examples. A microelectronic assembly100 may include any suitable number of regions 113 designated forintegral devices 112 as well as for integral device coupling to dies114, and any suitable number of regions 116 designated for signalrouting conductive pathways 118 between dies 114.

FIGS. 2B and 2C are side, cross-sectional views of example interconnectareas 113, 116 of the microelectronic assembly of FIG. 2A. As shown inFIG. 2B, the bridge 110 may include a first area 113-1, a second area113-2, and a third area 116. The first area 113-1 may include integraldevices 112 under at least a portion of the die 114-1 and a firstinterconnect area 113-1 at the surface of the bridge 110. The secondarea 113-2 may include integral devices 112 under at least a portion ofthe die 114-2 and a second interconnect area 113-2 at the surface of thebridge 110. The third area 116 may include conductive pathways 118 and athird interconnect area at the surface of the bridge 110, where thethird area 116 is between the first and second areas 113-1, 113-2.

As shown in FIG. 2C, the bridge 110 may include a first area 113-1, asecond area 113-2, and a third area 116. The first area 113-1 mayinclude integral devices 112 under at least a portion of the die 114-1and a first interconnect area 113-1 at the surface of the bridge 110.The second area 113-2 may include integral devices 112 under at least aportion of the die 114-2 and a second interconnect area 113-2 at thesurface of the bridge 110. The third area 116 may include conductivepathways 118 and a third interconnect area at the surface of the bridge110, where the third area 116 is between the first and second areas113-1, 113-2 and extends under at least a portion of the first area113-1.

FIG. 3A is a top, transparent view of an example microelectronicassembly 100 including a package substrate 102, a bridge 110 havingintegral devices 112, and multiple dies 114 disposed thereon. Inparticular, the bridge 110 may include a cTFR 112-1 as an integraldevice 112, in accordance with various embodiments. As shown in in FIG.3A, the bridge 110 may include three cTFRs 112-1 in a first interconnectarea 113-1 and four cTFRs 112-1 in a second interconnect area 113-2.Although FIG. 3 shows a particular number and arrangement of cTFRs112-1, a bridge 110 may include any suitable number of cTFRs 112-1having any suitable arrangement.

FIG. 3B is a side, cross-sectional view along the A-A′ line of theexample microelectronic assembly 100 of FIG. 3A. The microelectronicassembly 100 may include the bridge 110 having a plurality of cTFRs112-1 at a surface of the bridge 110. The cTFRs 112-1 in a firstinterconnect area 113-1 may be coupled to the die 114-1 and the cTFRs112-1 in a second interconnect area 113-2 may be coupled to the die114-2. A third interconnect area 116 may include conductive pathways forcoupling the dies 114-1 and 114-2. The cTFRs 112-1 may be coupled toconductive pathways in the dies 114-1, 114-2 via the first levelinterconnects 108. The dies 114-1, 114-2 may be coupled to each othervia the conductive pathways in the bridge 110 and the first levelinterconnects 108.

FIG. 3C is a top, transparent view showing example conductiveconnections of the die 114-2 of the microelectronic assembly 100 of FIG.3A, in accordance with various embodiments. In particular, FIG. 3C showsthe first level interconnects 108-2 (e.g., as depicted by the blackcircles) at the second surface 170-2 of the package substrate 102coupling the die 114-2 to the bridge 110 and to the package substrate102. The die 114-2 may include an integral device interconnect area113-2 (e.g., the second interconnect area of FIG. 3A), a signalinterconnect area 116, and a package substrate interconnect area 103.The die 114-2 may be coupled to conductive pathways (e.g., conductivepathway 118 of FIG. 3B) in the bridge 110 via the first levelinterconnects 108-2 in the signal interconnect area 116. The die 114-2may be coupled to the cTFRs 112-1 in the bridge 110 via the first levelinterconnects 108-2 in the integral device interconnect area 113-2. ThecTFRs 112-1 in the bridge 110 may be coupled to conductive pathways 314in other metallization layers of the die 114-2 by vias 315 (e.g., asdepicted by the gray squares) to the next conductive layer (e.g., anupper metallization layer). The conductive pathways 314 in the die 114-2may be a ground, a power, or a signal connection. In some embodiments, acTFR 112-1 may be coupled to one ground connection and one signalconnection. The die 114-2 may be coupled to the package substrate 102via the first level interconnects 108-2 in the package substrateinterconnect area 103.

FIG. 4A is a cross-sectional side view of a microelectronic assembly 100including a package substrate 102, a bridge 110 embedded in the packagesubstrate 102, and multiple dies 114-1, 114-2, 114-3 disposed thereon.In particular, the bridge 110 may include one or more integral devices,such as cTFRs 112-1, in a first region 113-1 under the first die 114-1and in a second region 113-2 under the second die 114-2. The bridge 110may further include a third region 116 having conductive pathways (notshown) between the first and second dies 114-1, 114-2. The first andsecond dies 114-1, 114-2 may be coupled directly to the bridge 110 andthe package substrate 102 via first level interconnects 108. The thirddie 114-3 may be coupled directly to the package substrate via firstlevel interconnects 108.

FIG. 4B is top, transparent view of an example architecture of themicroelectronic assembly 100 of FIG. 4A, in accordance with variousembodiments. The microelectronic assembly 100 may include a first die114-1 and a second die 114-2 coupled to a bridge 110 embedded in apackage substrate 102, and a third die 114-3 coupled to the packagesubstrate 102. The bridge 110 may include one or more cTFRs 112-1 forimproved calibration of a circuit as described in detail below withreference to FIGS. 5 and 6, in accordance with various embodiments. Asshown in FIG. 4B, the first die 114-1 may include two circuits 410, 412,coupled to cTFRs 112-1 in the first region 113-1 of the bridge 110 viafirst level interconnects 108 and conductive pathways 411 in the die114-1. The first die 114-1 may further include a third circuit 414coupled to a differential cTFR 112-1 in the first region 113-1 of thebridge 110 via first level interconnects and conductive pathways 413 inthe first die 114-1. The first die 114-1 may further include calibrationlogic (not shown) for performing calibration of the circuits 410, 412,414 with the respective cTFRs 112-1. In some embodiments, the first die114-1 is a GPU.

The second die 114-2 may include a plurality of cores or computationlogic blocks 450 and a plurality of electrical components 420, 422, 424,426, 428. An individual core 450 may include an integrated voltageregulator/power gate 452. An individual core 450 may be coupled to arespective individual cTFR 112-1 in the second region 113-2 of thebridge 110 via conductive pathways 421 in the second die 114-2. Eachindividual core may be coupled to an individual cTFR 112-1 as indicatedby the thicker line 421A connecting the respective cores 450 to arespective cTFR 112-1. The electrical components 420, 422, 424, 426, 428may be coupled to the cTFRs 112-1 in the second region 113-2 of thebridge 110 via conductive pathways 421 in the second die 114-2. As shownin FIG. 4B, a component may be coupled to one or more cTFRs 112-1. Insome embodiments, a component, such as component 420, may be coupled tomore than one cTFR 112-1, where the component may include more than onecircuit and an individual circuit may be coupled to a respectiveindividual cTFR 112-1. In some embodiments, a component, such ascomponents 422, 424, 426, and 428, may have one individual circuitcoupled to a respective individual cTFR 112-1. In some embodiments, theelectrical components 420, 422, 424, 426, 428 may include high-speedinput/output circuits, such as a double data rate (DDR) memoryinterface, a differential I/O interface (e.g., a Peripheral ComponentInterconnect Express (PCIE)), or a display interface. The second die114-2 may further include calibration logic (not shown) for performingcalibration of the circuits of the electrical components 420, 422, 424,426, 428 and the cores 450 with the respective cTFRs 112-1. In someembodiments, the second die 114-2 is a CPU, or other processing unitwith core logic and input/output interface circuits.

In some embodiments, a die may be indirectly coupled to an integralcomponent in a bridge. For example, as shown in FIG. 4B, the third die114-3 may include a circuit 430 that may be coupled to, and calibratedby, the cTFR 112-1 in the bridge 110, where the third die 114-3 isindirectly coupled to the bridge via the first die 114-1 (e.g., thethird die 114-3 is not directly coupled to the bridge 110 via firstlevel interconnects 108). In particular, the circuit 430 in the thirddie 114-3 may be coupled to the cTFR 112-1 in the bridge 110 viaconductive pathways 415 in the first die 114-1, the first levelinterconnect 108, and the conductive pathways 117 in the packagesubstrate 102. The first die 114-1 and/or the third die 114-3 mayfurther include calibration logic (not shown) for performing calibrationof the circuit 430 with the respective cTFR 112-1. In some embodiments,the third die 114-3 is a PCH.

FIG. 5 is an example architecture of a calibration circuit 500 in amicroelectronic assembly, in accordance with various embodiments. Themicroelectronic assembly may include a die 114 coupled to a bridge 110embedded in a package substrate 102. The bridge 110 may include, asintegral devices, one or more cTFRs 112-1 having a known resistance. Thedie 114 may include a calibration module 502 and a buffer 512 having aplurality of transistors connected in parallel. The calibration module502 may include a hardware processor, memory, circuitry, and logic tofilter and detect resistance in the circuit. The calibration module 502may be coupled to the buffer 512 and the cTFR 112-1 in the bridge 110.Based on the known voltage of the circuit and the known resistance ofthe cTFR 112-1, the calibration module 502 may determine the number oftransistors to connect in parallel to achieve a target resistance in thebuffer 512.

FIG. 6 is another example architecture of a calibration circuit 600 in amicroelectronic assembly, in accordance with various embodiments. Themicroelectronic assembly may include a die 114 coupled to a bridge 110embedded in a package substrate 102. The bridge 110 may include, asintegral devices, one or more cTFRs 112-1 having a known resistance. Thedie 114 may include a calibration module 602, a transistor 610, and anon-die band gap reference voltage 604. The calibration module 602 may becoupled to the on-die band gap reference voltage 604, the cTFR 112-1 inthe bridge 110, and the transistor 610. The calibration module 602 maymeasure voltage 612 across the transistor 610 and may determine acurrent of the circuit. The die 114, optionally, may include a circuitmanagement module 606 coupled to the calibration module 602. The circuitmanagement module 606 may compare the determined current of the circuitto a target value, and, based on a variance between the determinedcurrent and the target current, may adjust the circuit parameters (e.g.,by changing signal or clock frequency) to meet the target current. Insome embodiments, the circuit management module 606 may determine thecurrent of the circuit based on the voltage 612 measured by thecalibration module 602. The calibration module 602 may include ahardware processor, memory, circuitry, and logic to filter and detectvoltage 612 in the circuit. The circuit management module 606 mayinclude a hardware processor, memory, circuitry, and logic to adjust thecircuit parameters to meet target values or may simply reportmeasurements.

FIG. 7A is a top, transparent view of an example microelectronicassembly 100 including a package substrate 102, a bridge 110 havingintegral devices 112, and multiple dies 114 disposed thereon. Inparticular, the bridge 110 may include a capacitor 112-2 as an integraldevice 112 for reducing RFI and/or EMI in the microelectronic assembly100, in accordance with various embodiments. In some embodiments, thecapacitor 112-2 is a plurality of capacitors. In some embodiments, theplurality of capacitors 112-2 are arranged in an array. As shown in FIG.7A, the bridge 110 may include an array of four capacitors 112-2 in afirst interconnect area 113-1 and an array of six capacitors 112-2 in asecond interconnect area 113-2. Although FIG. 7 shows a particularnumber and arrangement of capacitors 112-2, a bridge 110 may include anysuitable number of capacitors 112-2 having any suitable arrangement. Insome embodiments, the capacitors 112-2 may not be arranged in an array.

FIG. 7B is a side, cross-sectional view along the A-A′ line of theexample microelectronic assembly 100 of FIG. 7A. The microelectronicassembly 100 may include the bridge 110 having a plurality of capacitors112-2, where the capacitors 112-2 may be arranged in different layerswithin the routing layers 111 b (e.g., at a surface of the bridge 110and/or within one or more routing layers of the bridge 110). In someembodiments, the substrate 111 a of the bridge 110 may include thecapacitors 112-2. In some embodiments, the capacitors 112-2 in thesubstrate 111 a of the bridge 110 may include an array of MOScapacitors. The capacitors 112-2 in a first interconnect area 113-1 maybe coupled to the die 114-1 via first level interconnects 108-1, and thecapacitors 112-2 in a second interconnect area 113-2 may be coupled tothe die 114-2 via first level interconnects 108-2 and conductivepathways 115 in the bridge 110. A third interconnect area 116 mayinclude conductive pathways 118 for coupling the die 114-1 and the die114-2. The capacitor 112-2 may be any suitable capacitor, including, forexample, a trench capacitor, a metal-insulator-metal (MIM) capacitor, ora MOS capacitor. The capacitor 112-2 may be made of any suitablematerial, and may be made of the same material as the bridge 110.

FIG. 8A is a perspective view of a portion of an example microelectronicassembly 800 including an array of six capacitors 112-2 as integraldevices in a bridge 110, in accordance with various embodiments. Asshown in FIG. 8A, an individual capacitor 112-2 may include a firstconductive plate 112-2A and a second conductive plate 112-2B with adielectric material (not shown) between the two conductive plates (e.g.,a MIM capacitor). In some embodiments, the first conductive plate 112-2Amay be a power plate and the second conductive plate 112-2B may be aground plate.

FIG. 8B is a side, cross-sectional view of the example microelectronicassembly 800, in accordance with various embodiments. As shown in FIG.8B, the first and second conductive plates 112-2A, 112-2B may be coupledto a die 114 at a surface of the bridge by conductive pathways in thebridge 110. In particular, the first conductive plate 112-2A may becoupled to a die 114 by vias 815 in the bridge 110 and the secondconductive plate 112-2B may be coupled to a die 114 by vias 816 in thebridge 110.

FIG. 8C is a perspective, transparent view of the microelectronicassembly 800 of FIG. 8A showing the array of capacitors 112-2 in thebridge 110 coupled to dies 114-1, 114-2, in accordance with variousembodiments. As shown in FIG. 8C, a first die 114-1 may be coupled to anarray of four capacitors 112-2 and a second die 114-2 may be coupled toan array of two capacitors 112-2. An individual capacitor 112-2 mayinclude a first conductive plate 112-2A coupled to the die 114 by vias815 and conductive pathways 822 in the die 114, and a second conductiveplate 112-2B coupled to the die 114 by vias 816 and conductive pathways824 in the die 114. In some embodiments, the conductive pathways 822 arecoupled to a power source and the conductive pathways 824 are coupled toa ground source.

FIG. 9A is a schematic of an example architecture of a microelectronicassembly 900A, in accordance with various embodiments. Themicroelectronic assembly 900A may include a die 114, a package substrate102, and a bridge 110 embedded in the package substrate 102, where thebridge 110 includes an array of capacitors 914 as integral devices. Thedie 114 may be coupled to the package substrate 102 via the capacitor914, a parasitic resistance 912, and/or a parasitic inductance 910 inthe bridge 110. The die 114 may be a source of RF noise and mayintroduce RFI and/or EMI into a signal. By coupling the die 114 to oneor more capacitors 914 (e.g., an array of capacitors 914) in the bridge110, the RFI and/or EMI may be mitigated (e.g., absorbed) beforereaching the package substrate 102 and/or circuit board (not shown). Insome embodiments, the array of capacitors 914 in the bridge 110 mayfunction as a tunable notch filter where a frequency may be adjustedbased on the number of capacitors in the array of capacitors 914 on thebridge that are connected to the die 114, or based on the number ofconnections to alter the parasitic inductance 910.

FIG. 9B is a schematic of an example architecture of a circuit 900B ofan example microelectronic assembly, in accordance with variousembodiments. As shown in FIG. 9B, the circuit 900B may includearchitecture for a power delivery network having a high-frequencycurrent 952, generated in a switching circuit on a die (e.g., die 114 inFIG. 9A), injected into the power delivery network. The circuit 900B mayinclude a plurality of capacitors 944-1, 944-2, 944-3, and a pluralityof parasitic inductances 942-1, 942-2, 942-3 that may be connected,respectively, as depicted in FIG. 9A, between the switching circuits onthe die 114 and the power delivery network on the package substrate 102and/or a circuit board (not shown). The power delivery network on acircuit board and/or a package substrate 102 may include a voltageregulator 950, power plane parasitic inductances 933-1, 933-2, 933-3,parasitic resistances 931-1, 931-2, 931-3, and decoupling capacitors934-1, 934-2, 934-3. The plurality of capacitors 944-1, 944-2, 944-3 maybe integral devices in the bridge 110, and with the respective pluralityof inductors 942-1, 942-2, 942-3 may form notch filters (e.g., asdescribed above with reference to FIG. 9A) to provide a low impedancepath for the high-frequency current 952, such that the power deliverynetwork to the package substrate 102 and/or circuit board may not besubjected to the high-frequency current and the EMI and/or RFI to thepackage substrate and/or circuit board may be mitigated.

The microelectronic assemblies disclosed herein may be included in anysuitable electronic component. FIGS. 10-13 illustrate various examplesof apparatuses that may include, or be included in, any of themicroelectronic assemblies disclosed herein.

FIG. 10 is a top view of a wafer 1000 and dies 1002 that may be includedin any of the microelectronic assemblies disclosed herein (e.g., any ofthe dies 114 disclosed herein). The wafer 1000 may be composed ofsemiconductor material and may include one or more dies 1002 having ICstructures formed on a surface of the wafer 1000. Each of the dies 1002may be a repeating unit of a semiconductor product that includes anysuitable IC. After the fabrication of the semiconductor product iscomplete, the wafer 1000 may undergo a singulation process in which thedies 1002 are separated from one another to provide discrete “chips” ofthe semiconductor product. The die 1002 may be any of the dies 114disclosed herein. The die 1002 may include one or more transistors(e.g., some of the transistors 1140 of FIG. 11, discussed below),supporting circuitry to route electrical signals to the transistors,passive components (e.g., signal traces, resistors, capacitors, orinductors), and/or any other IC components. In some embodiments, thewafer 1000 or the die 1002 may include a memory device (e.g., a randomaccess memory (RAM) device, such as a static RAM (SRAM) device, amagnetic RAM (MRAM) device, a resistive RAM (RRAM) device, aconductive-bridging RAM (CBRAM) device, etc.), a logic device (e.g., anAND, OR, NAND, or NOR gate), or any other suitable circuit element.Multiple ones of these devices may be combined on a single die 1002. Forexample, a memory array formed by multiple memory devices may be formedon a same die 1002 as a processing device (e.g., the processing device1402 of FIG. 13) or other logic that is configured to store informationin the memory devices or execute instructions stored in the memoryarray. Various ones of the microelectronic assemblies disclosed hereinmay be manufactured using a die-to-wafer assembly technique in whichsome dies are attached to a wafer 1000 that includes others of the dies,and the wafer 1000 is subsequently singulated.

FIG. 11 is a cross-sectional side view of an example IC device 1100 thatmay be included in any of the microelectronic assemblies disclosedherein (e.g., in any of the dies 114). One or more of the IC devices1100 may be included in one or more dies 1002 (FIG. 10). The IC device1100 may be formed on a substrate 1102 (e.g., the wafer 1000 of FIG. 10)and may be included in a die (e.g., the die 1002 of FIG. 10). Thesubstrate 1102 may be a semiconductor substrate composed ofsemiconductor material systems including, for example, n-type or p-typematerials systems (or a combination of both). The substrate 1102 mayinclude, for example, a crystalline substrate formed using a bulksilicon or a silicon-on-insulator (SOI) substructure. In someembodiments, the substrate 1102 may be formed using alternativematerials, which may or may not be combined with silicon, that includebut are not limited to germanium, indium antimonide, lead telluride,indium arsenide, indium phosphide, gallium arsenide, or galliumantimonide. Further materials classified as group II-VI, III-V, or IVmay also be used to form the substrate 1102. Although a few examples ofmaterials from which the substrate 1102 may be formed are describedhere, any material that may serve as a foundation for an IC device 1100may be used. The substrate 1102 may be part of a singulated die (e.g.,the dies 1002 of FIG. 10) or a wafer (e.g., the wafer 1000 of FIG. 10).

The IC device 1100 may include one or more device layers 1104 disposedon the substrate 1102. The device layer 1104 may include features of oneor more transistors 1140 (e.g., metal oxide semiconductor field-effecttransistors (MOSFETs)) formed on the substrate 1102 and/or any otheractive and/or passive circuitry as may be desired by a devicemanufacturer. The device layer 1104 may include, for example, one ormore source and/or drain (S/D) regions 1120, a gate 1122 to controlcurrent flow in the transistors 1140 between the S/D regions 1120, andone or more S/D contacts 1124 to route electrical signals to/from theS/D regions 1120. The transistors 1140 may include additional featuresnot depicted for the sake of clarity, such as device isolation regions,gate contacts, and the like. The transistors 1140 are not limited to thetype and configuration depicted in FIG. 11 and may include a widevariety of other types and configurations such as, for example, planartransistors, non-planar transistors, or a combination of both.Non-planar transistors may include FinFET transistors, such asdouble-gate transistors or tri-gate transistors, and wrap-around orall-around gate transistors, such as nanoribbon and nanowiretransistors.

Each transistor 1140 may include a gate 1122 formed of at least twolayers, a gate dielectric and a gate electrode. The gate dielectric mayinclude one layer or a stack of layers. The one or more layers mayinclude silicon oxide, silicon dioxide, silicon carbide, and/or a high-kdielectric material. The high-k dielectric material may include elementssuch as hafnium, silicon, oxygen, titanium, tantalum, lanthanum,aluminum, zirconium, barium, strontium, yttrium, lead, scandium,niobium, and zinc. Examples of high-k materials that may be used in thegate dielectric include, but are not limited to, hafnium oxide, hafniumsilicon oxide, lanthanum oxide, lanthanum aluminum oxide, zirconiumoxide, zirconium silicon oxide, tantalum oxide, titanium oxide, bariumstrontium titanium oxide, barium titanium oxide, strontium titaniumoxide, yttrium oxide, aluminum oxide, lead scandium tantalum oxide, andlead zinc niobate. In some embodiments, an annealing process may becarried out on the gate dielectric to improve its quality when a high-kmaterial is used.

The gate electrode may be formed on the gate dielectric and may includeat least one p-type work function metal or n-type work function metal,depending on whether the transistor 1140 is to be a p-type metal oxidesemiconductor (PMOS) or an n-type metal oxide semiconductor (NMOS)transistor. In some implementations, the gate electrode may consist of astack of two or more metal layers, where one or more metal layers arework function metal layers and at least one metal layer is a fill metallayer. Further metal layers may be included for other purposes, such asa barrier layer. For a PMOS transistor, metals that may be used for thegate electrode include, but are not limited to, ruthenium, palladium,platinum, cobalt, nickel, conductive metal oxides (e.g., rutheniumoxide), and any of the metals discussed below with reference to an NMOStransistor (e.g., for work function tuning). For an NMOS transistor,metals that may be used for the gate electrode include, but are notlimited to, hafnium, zirconium, titanium, tantalum, aluminum, alloys ofthese metals, carbides of these metals (e.g., hafnium carbide, zirconiumcarbide, titanium carbide, tantalum carbide, and aluminum carbide), andany of the metals discussed above with reference to a PMOS transistor(e.g., for work function tuning).

In some embodiments, when viewed as a cross-section of the transistor1140 along the source-channel-drain direction, the gate electrode mayconsist of a U-shaped structure that includes a bottom portionsubstantially parallel to the surface of the substrate and two sidewallportions that are substantially perpendicular to the top surface of thesubstrate. In other embodiments, at least one of the metal layers thatform the gate electrode may simply be a planar layer that issubstantially parallel to the top surface of the substrate and does notinclude sidewall portions substantially perpendicular to the top surfaceof the substrate. In other embodiments, the gate electrode may consistof a combination of U-shaped structures and planar, non-U-shapedstructures. For example, the gate electrode may consist of one or moreU-shaped metal layers formed atop one or more planar, non-U-shapedlayers.

In some embodiments, a pair of sidewall spacers may be formed onopposing sides of the gate stack to bracket the gate stack. The sidewallspacers may be formed from materials such as silicon nitride, siliconoxide, silicon carbide, silicon nitride doped with carbon, and siliconoxynitride. Processes for forming sidewall spacers are well known in theart and generally include deposition and etching process steps. In someembodiments, a plurality of spacer pairs may be used; for instance, twopairs, three pairs, or four pairs of sidewall spacers may be formed onopposing sides of the gate stack.

The S/D regions 1120 may be formed within the substrate 1102 adjacent tothe gate 1122 of each transistor 1140. The S/D regions 1120 may beformed using an implantation/diffusion process or an etching/depositionprocess, for example. In the former process, dopants such as boron,aluminum, antimony, phosphorous, or arsenic may be ion-implanted intothe substrate 1102 to form the S/D regions 1120. An annealing processthat activates the dopants and causes them to diffuse farther into thesubstrate 1102 may follow the ion-implantation process. In the latterprocess, the substrate 1102 may first be etched to form recesses at thelocations of the S/D regions 1120. An epitaxial deposition process maythen be carried out to fill the recesses with material that is used tofabricate the S/D regions 1120. In some implementations, the S/D regions1120 may be fabricated using a silicon alloy such as silicon germaniumor silicon carbide. In some embodiments, the epitaxially depositedsilicon alloy may be doped in situ with dopants such as boron, arsenic,or phosphorous. In some embodiments, the S/D regions 1120 may be formedusing one or more alternate semiconductor materials such as germanium ora group III-V material or alloy. In further embodiments, one or morelayers of metal and/or metal alloys may be used to form the S/D regions1120.

Electrical signals, such as power and/or I/O signals, may be routed toand/or from the devices (e.g., transistors 1140) of the device layer1104 through one or more interconnect layers disposed on the devicelayer 1104 (illustrated in FIG. 11 as interconnect layers 1106, 1108,and 1110). For example, electrically conductive features of the devicelayer 1104 (e.g., the gate 1122 and the S/D contacts 1124) may beelectrically coupled with interconnect structures 1128 of theinterconnect layers 1106-1110. The one or more interconnect layers1106-1110 may form a metallization stack (also referred to as an “ILDstack”) 1119 of the IC device 1100.

The interconnect structures 1128 may be arranged within the interconnectlayers 1106-1110 to route electrical signals according to a wide varietyof designs. In particular, the arrangement is not limited to theparticular configuration of interconnect structures 1128 depicted inFIG. 11. For example, the interconnect structures may be arranged asmultidirectional interconnect structures. Although a particular numberof interconnect layers 1106-1110 is depicted in FIG. 11, embodiments ofthe present disclosure include IC devices having more or fewerinterconnect layers than depicted.

In some embodiments, the interconnect structures 1128 may include lines1128 a and/or vias 1128 b filled with an electrically conductivematerial such as a metal. The lines 1128 a may be arranged to routeelectrical signals in a direction of a plane that is substantiallyparallel with a surface of the substrate 1102 upon which the devicelayer 1104 is formed. For example, the lines 1128 a may route electricalsignals in a direction in and out of the page from the perspective ofFIG. 11. The vias 1128 b may be arranged to route electrical signals ina direction of a plane that is substantially perpendicular to thesurface of the substrate 1102 upon which the device layer 1104 isformed. In some embodiments, the vias 1128 b may electrically couplelines 1128 a of different interconnect layers 1106-1110 together.

The interconnect layers 1106-1110 may include a dielectric material 1126disposed between the interconnect structures 1128, as shown in FIG. 11.In some embodiments, the dielectric material 1126 disposed between theinterconnect structures 1128 in different ones of the interconnectlayers 1106-1110 may have different compositions; in other embodiments,the composition of the dielectric material 1126 between differentinterconnect layers 1106-1110 may be the same.

A first interconnect layer 1106 (referred to as Metal 1 or “M1”) may beformed directly on the device layer 1104. In some embodiments, the firstinterconnect layer 1106 may include lines 1128 a and/or vias 1128 b, asshown. The lines 1128 a of the first interconnect layer 1106 may becoupled with contacts (e.g., the S/D contacts 1124) of the device layer1104.

A second interconnect layer 1108 (referred to as Metal 2 or “M2”) may beformed directly on the first interconnect layer 1106. In someembodiments, the second interconnect layer 1108 may include vias 1128 bto couple the lines 1128 a of the second interconnect layer 1108 withthe lines 1128 a of the first interconnect layer 1106. Although thelines 1128 a and the vias 1128 b are structurally delineated with a linewithin each interconnect layer (e.g., within the second interconnectlayer 1108) for the sake of clarity, the lines 1128 a and the vias 1128b may be structurally and/or materially contiguous (e.g., simultaneouslyfilled during a dual damascene process) in some embodiments.

A third interconnect layer 1110 (referred to as Metal 3 or “M3”) (andadditional interconnect layers, as desired) may be formed in successionon the second interconnect layer 1108 according to similar techniquesand configurations described in connection with the second interconnectlayer 1108 or the first interconnect layer 1106. In some embodiments,the interconnect layers that are “higher up” in the metallization stack1119 in the IC device 1100 (i.e., farther away from the device layer1104) may be thicker.

The IC device 1100 may include a solder resist material 1134 (e.g.,polyimide or similar material) and one or more conductive contacts 1136formed on the interconnect layers 1106-1110. In FIG. 11, the conductivecontacts 1136 are illustrated as taking the form of bond pads. Theconductive contacts 1136 may be electrically coupled with theinterconnect structures 1128 and configured to route the electricalsignals of the transistor(s) 1140 to other external devices. Forexample, solder bonds may be formed on the one or more conductivecontacts 1136 to mechanically and/or electrically couple a chipincluding the IC device 1100 with another component (e.g., a circuitboard). The IC device 1100 may include additional or alternatestructures to route the electrical signals from the interconnect layers1106-1110; for example, the conductive contacts 1136 may include otheranalogous features (e.g., posts) that route the electrical signals toexternal components.

In embodiments in which the IC device 1100 is a double-sided die (e.g.,like the die 114), the IC device 1100 may include another metallizationstack (not shown) on the opposite side of the device layer(s) 1104. Thismetallization stack may include multiple interconnect layers asdiscussed above with reference to the interconnect layers 1106-1110, toprovide conductive pathways (e.g., including conductive lines and vias)between the device layer(s) 1104 and additional conductive contacts (notshown) on the opposite side of the IC device 1100 from the conductivecontacts 1136. FIG. 12 is a cross-sectional side view of an IC deviceassembly 1300 that may include any of the microelectronic assembliesdisclosed herein. In some embodiments, the IC device assembly 1300 maybe a microelectronic assembly 100. The IC device assembly 1300 includesa number of components disposed on a circuit board 1302 (which may be,e.g., a motherboard). The IC device assembly 1300 includes componentsdisposed on a first surface 1340 of the circuit board 1302 and anopposing second surface 1342 of the circuit board 1302; generally,components may be disposed on one or both surfaces 1340 and 1342. Any ofthe IC packages discussed below with reference to the IC device assembly1300 may take the form of any suitable ones of the embodiments of themicroelectronic assemblies disclosed herein.

In some embodiments, the circuit board 1302 may be a PCB includingmultiple metal layers separated from one another by layers of dielectricmaterial and interconnected by electrically conductive vias. Any one ormore of the metal layers may be formed in a desired circuit pattern toroute electrical signals (optionally in conjunction with other metallayers) between the components coupled to the circuit board 1302. Inother embodiments, the circuit board 1302 may be a non-PCB substrate.

The IC device assembly 1300 illustrated in FIG. 12 includes apackage-on-interposer structure 1336 coupled to the first surface 1340of the circuit board 1302 by coupling components 1316. The couplingcomponents 1316 may electrically and mechanically couple thepackage-on-interposer structure 1336 to the circuit board 1302, and mayinclude solder balls (as shown in FIG. 12), male and female portions ofa socket, an adhesive, an underfill material, and/or any other suitableelectrical and/or mechanical coupling structure.

The package-on-interposer structure 1336 may include an IC package 1320coupled to an interposer 1304 by coupling components 1318. The couplingcomponents 1318 may take any suitable form for the application, such asthe forms discussed above with reference to the coupling components1316. Although a single IC package 1320 is shown in FIG. 12, multiple ICpackages may be coupled to the interposer 1304; indeed, additionalinterposers may be coupled to the interposer 1304. The interposer 1304may provide an intervening substrate used to bridge the circuit board1302 and the IC package 1320. The IC package 1320 may be or include, forexample, a die (the die 1002 of FIG. 10), or any other suitablecomponent. Generally, the interposer 1304 may spread a connection to awider pitch or reroute a connection to a different connection. Forexample, the interposer 1304 may couple the IC package 1320 (e.g., adie) to a set of ball grid array (BGA) conductive contacts of thecoupling components 1316 for coupling to the circuit board 1302. In theembodiment illustrated in FIG. 12, the IC package 1320 and the circuitboard 1302 are attached to opposing sides of the interposer 1304; inother embodiments, the IC package 1320 and the circuit board 1302 may beattached to a same side of the interposer 1304. In some embodiments,three or more components may be interconnected by way of the interposer1304.

In some embodiments, the interposer 1304 may be formed as a PCB,including multiple metal layers separated from one another by layers ofdielectric material and interconnected by electrically conductive vias.In some embodiments, the interposer 1304 may be formed of an epoxyresin, a fiberglass-reinforced epoxy resin, an epoxy resin withinorganic fillers, a ceramic material, or a polymer material such aspolyimide. In some embodiments, the interposer 1304 may be formed ofalternate rigid or flexible materials that may include the samematerials described above for use in a semiconductor substrate, such assilicon, germanium, and other group III-V and group IV materials. Theinterposer 1304 may include metal interconnects 1308 and vias 1310,including but not limited to TSVs 1306. The interposer 1304 may furtherinclude embedded devices 1314, including both passive and activedevices. Such devices may include, but are not limited to, capacitors,decoupling capacitors, resistors, inductors, fuses, diodes,transformers, sensors, electrostatic discharge (ESD) devices, and memorydevices. More complex devices such as radio frequency devices, poweramplifiers, power management devices, antennas, arrays, sensors, andmicroelectromechanical systems (MEMS) devices may also be formed on theinterposer 1304. The package-on-interposer structure 1336 may take theform of any of the package-on-interposer structures known in the art.

The IC device assembly 1300 may include an IC package 1324 coupled tothe first surface 1340 of the circuit board 1302 by coupling components1322. The coupling components 1322 may take the form of any of theembodiments discussed above with reference to the coupling components1316, and the IC package 1324 may take the form of any of theembodiments discussed above with reference to the IC package 1320.

The IC device assembly 1300 illustrated in FIG. 12 includes apackage-on-package structure 1334 coupled to the second surface 1342 ofthe circuit board 1302 by coupling components 1328. Thepackage-on-package structure 1334 may include an IC package 1326 and anIC package 1332 coupled together by coupling components 1330 such thatthe IC package 1326 is disposed between the circuit board 1302 and theIC package 1332. The coupling components 1328 and 1330 may take the formof any of the embodiments of the coupling components 1316 discussedabove, and the IC packages 1326 and 1332 may take the form of any of theembodiments of the IC package 1320 discussed above. Thepackage-on-package structure 1334 may be configured in accordance withany of the package-on-package structures known in the art.

FIG. 13 is a block diagram of an example electrical device 1400 that mayinclude one or more of the microelectronic assemblies disclosed herein.For example, any suitable ones of the components of the electricaldevice 1400 may include one or more of the IC device assemblies 1300, ICdevices 1100, or dies 1002 disclosed herein, and may be arranged in anyof the microelectronic assemblies disclosed herein. A number ofcomponents are illustrated in FIG. 13 as included in the electricaldevice 1400, but any one or more of these components may be omitted orduplicated, as suitable for the application. In some embodiments, someor all of the components included in the electrical device 1400 may beattached to one or more motherboards. In some embodiments, some or allof these components are fabricated onto a single system-on-a-chip (SoC)die.

Additionally, in various embodiments, the electrical device 1400 may notinclude one or more of the components illustrated in FIG. 13, but theelectrical device 1400 may include interface circuitry for coupling tothe one or more components. For example, the electrical device 1400 maynot include a display device 1406, but may include display deviceinterface circuitry (e.g., a connector and driver circuitry) to which adisplay device 1406 may be coupled. In another set of examples, theelectrical device 1400 may not include an audio input device 1424 or anaudio output device 1408, but may include audio input or output deviceinterface circuitry (e.g., connectors and supporting circuitry) to whichan audio input device 1424 or audio output device 1408 may be coupled.

The electrical device 1400 may include a processing device 1402 (e.g.,one or more processing devices). As used herein, the term “processingdevice” or “processor” may refer to any device or portion of a devicethat processes electronic data from registers and/or memory to transformthat electronic data into other electronic data that may be stored inregisters and/or memory. The processing device 1402 may include one ormore digital signal processors (DSPs), application-specific integratedcircuits (ASICs), CPUs, GPUs, cryptoprocessors (specialized processorsthat execute cryptographic algorithms within hardware), serverprocessors, or any other suitable processing devices. The electricaldevice 1400 may include a memory 1404, which may itself include one ormore memory devices such as volatile memory (e.g., dynamic random accessmemory (DRAM)), nonvolatile memory (e.g., read-only memory (ROM)), flashmemory, solid state memory, and/or a hard drive. In some embodiments,the memory 1404 may include memory that shares a die with the processingdevice 1402. This memory may be used as cache memory and may includeembedded dynamic random access memory (eDRAM) or spin transfer torquemagnetic random access memory (STT-MRAM).

In some embodiments, the electrical device 1400 may include acommunication chip 1412 (e.g., one or more communication chips). Forexample, the communication chip 1412 may be configured for managingwireless communications for the transfer of data to and from theelectrical device 1400. The term “wireless” and its derivatives may beused to describe circuits, devices, systems, methods, techniques,communications channels, etc., that may communicate data through the useof modulated electromagnetic radiation through a nonsolid medium. Theterm does not imply that the associated devices do not contain anywires, although in some embodiments they might not.

The communication chip 1412 may implement any of a number of wirelessstandards or protocols, including but not limited to Institute ofElectrical and Electronic Engineers (IEEE) standards including Wi-Fi(IEEE 802.11 family), IEEE 802.16 standards (e.g., IEEE 802.16-2005Amendment), 3rd Generation Partnership Project (3GPP) Long-TermEvolution (LTE), 5G, and 5G New Radio, along with any amendments,updates, and/or revisions (e.g., advanced LTE project, ultra-mobilebroadband (UMB) project (also referred to as “3GPP2”), etc.). IEEE802.16 compatible Broadband Wireless Access (BWA) networks are generallyreferred to as WiMAX networks, an acronym that stands for WorldwideInteroperability for Microwave Access, which is a certification mark forproducts that pass conformity and interoperability tests for the IEEE802.16 standards. The communication chip 1412 may operate in accordancewith a Global System for Mobile Communication (GSM), General PacketRadio Service (GPRS), Universal Mobile Telecommunications System (UMTS),High Speed Packet Access (HSPA), Evolved HSPA (E-HSPA), or LTE network.The communication chip 1412 may operate in accordance with Enhanced Datafor GSM Evolution (EDGE), GSM EDGE Radio Access Network (GERAN),Universal Terrestrial Radio Access Network (UTRAN), or Evolved UTRAN(E-UTRAN). The communication chip 1412 may operate in accordance withCode Division Multiple Access (CDMA), Time Division Multiple Access(TDMA), Digital Enhanced Cordless Telecommunications (DECT),Evolution-Data Optimized (EV-DO), and derivatives thereof, as well asany other wireless protocols that are designated as 3G, 4G, 5G, andbeyond. The communication chip 1412 may operate in accordance with otherwireless protocols in other embodiments. The electrical device 1400 mayinclude an antenna 1422 to facilitate wireless communications and/or toreceive other wireless communications (such as AM or FM radiotransmissions).

In some embodiments, the communication chip 1412 may manage wiredcommunications, such as electrical, optical, or any other suitablecommunication protocols (e.g., the Ethernet). As noted above, thecommunication chip 1412 may include multiple communication chips. Forinstance, a first communication chip 1412 may be dedicated toshorter-range wireless communications such as Wi-Fi or Bluetooth, and asecond communication chip 1412 may be dedicated to longer-range wirelesscommunications such as global positioning system (GPS), EDGE, GPRS,CDMA, WiMAX, LTE, EV-DO, or others. In some embodiments, a firstcommunication chip 1412 may be dedicated to wireless communications, anda second communication chip 1412 may be dedicated to wiredcommunications.

The electrical device 1400 may include battery/power circuitry 1414. Thebattery/power circuitry 1414 may include one or more energy storagedevices (e.g., batteries or capacitors) and/or circuitry for couplingcomponents of the electrical device 1400 to an energy source separatefrom the electrical device 1400 (e.g., AC line power).

The electrical device 1400 may include a display device 1406 (orcorresponding interface circuitry, as discussed above). The displaydevice 1406 may include any visual indicators, such as a heads-updisplay, a computer monitor, a projector, a touchscreen display, aliquid crystal display (LCD), a light-emitting diode display, or a flatpanel display.

The electrical device 1400 may include an audio output device 1408 (orcorresponding interface circuitry, as discussed above). The audio outputdevice 1408 may include any device that generates an audible indicator,such as speakers, headsets, or earbuds.

The electrical device 1400 may include an audio input device 1424 (orcorresponding interface circuitry, as discussed above). The audio inputdevice 1424 may include any device that generates a signalrepresentative of a sound, such as microphones, microphone arrays, ordigital instruments (e.g., instruments having a musical instrumentdigital interface (MIDI) output).

The electrical device 1400 may include a GPS device 1418 (orcorresponding interface circuitry, as discussed above). The GPS device1418 may be in communication with a satellite-based system and mayreceive a location of the electrical device 1400, as known in the art.

The electrical device 1400 may include another output device 1410 (orcorresponding interface circuitry, as discussed above). Examples of theother output device 1410 may include an audio codec, a video codec, aprinter, a wired or wireless transmitter for providing information toother devices, or an additional storage device.

The electrical device 1400 may include another input device 1420 (orcorresponding interface circuitry, as discussed above). Examples of theother input device 1420 may include an accelerometer, a gyroscope, acompass, an image capture device, a keyboard, a cursor control devicesuch as a mouse, a stylus, a touchpad, a bar code reader, a QuickResponse (QR) code reader, any sensor, or a radio frequencyidentification (RFID) reader.

The electrical device 1400 may have any desired form factor, such as ahand-held or mobile electrical device (e.g., a cell phone, a smartphone, a mobile internet device, a music player, a tablet computer, alaptop computer, a netbook computer, an ultrabook computer, a personaldigital assistant (PDA), an ultra-mobile personal computer, a portablecomputing device, etc.), a desktop electrical device, a server or othernetworked computing device, a printer, a scanner, a monitor, a set-topbox, an entertainment control unit, a vehicle control unit, a digitalcamera, a digital video recorder, or a wearable computing device. Insome embodiments, the electrical device 1400 may be any other electronicdevice that processes data.

The following paragraphs provide various examples of the embodimentsdisclosed herein.

Example 1 is a microelectronic assembly, including: a substrate; abridge, having a first surface and an opposing second surface, embeddedin the substrate, wherein the bridge includes an integral passivecomponent, and wherein the second surface of the bridge includes firstcontacts in a first bridge interconnect area and second contacts in asecond bridge interconnect area; a first die coupled to the integralpassive component via the first contacts in the first bridgeinterconnect area; and a second die coupled to the second contacts inthe second bridge interconnect area.

Example 2 may include the subject matter of Example 1, and may furtherspecify that the integral passive component is a thin film resistor(TFR).

Example 3 may include the subject matter of Example 2, and may furtherspecify that the TFR is part of a calibration circuit.

Example 4 may include the subject matter of Example 1, and may furtherspecify that the integral passive component is an array of capacitors.

Example 5 may include the subject matter of Example 4, and may furtherspecify that an individual capacitor in the array of capacitors is oneof a trench capacitor, a metal-oxide-semiconductor (MOS) capacitor, ametal-insulator-metal (MIM) capacitor, or a parallel plate capacitor.

Example 6 may include the subject matter of Example 4, and may furtherspecify that the array of capacitors is part of an input/output circuit.

Example 7 may include the subject matter of Example 4, and may furtherspecify that the array of capacitors is to mitigate electromagneticinterference (EMI) generated by the first die or by the second die.

Example 8 may include the subject matter of Example 1, and may furtherspecify that the bridge includes conductive pathways, that the secondsurface of the bridge further includes third contacts in a third bridgeinterconnect area; and that the first die is coupled to the second dievia the third contacts and the conductive pathways in the bridge.

Example 9 may include the subject matter of Example 1, and may furtherspecify that the integral passive component is a first integral passivecomponent, and that the bridge further including a second integralpassive component coupled to the first die via the first contacts in thefirst bridge interconnect area.

Example 10 may include the subject matter of Example 9, and may furtherspecify that the first integral passive component is a TFR and thesecond integral passive component is a capacitor.

Example 11 may include the subject matter of Example 9, and may furtherspecify that the first integral passive component is at the secondsurface of the bridge.

Example 12 may include the subject matter of Example 9, and may furtherspecify that the second integral passive component is between the firstsurface and the second surface of the bridge.

Example 13 may include the subject matter of Example 1, and may furtherspecify that the first die is a central processing unit, platformcontroller hub, graphics processing unit, memory, or an input/outputinterface.

Example 14 may include the subject matter of Example 1, and may furtherspecify that the second die is a graphics processing unit, memory, or avoltage regulator.

Example 15 is a computing device, including: a circuit board; and anintegrated circuit (IC) package disposed on the circuit board, whereinthe IC package includes: a package substrate; a bridge, having opposingfirst and second faces, wherein the second face includes first contactsin a first interconnect area and second contacts in a secondinterconnect area, wherein the bridge is embedded in the packagesubstrate, and wherein the bridge includes: a thin film resistor (TFR)at the second face, wherein a conductive portion of the TFR is disposedon a layer of an insulating material between the first and second faces;and a die coupled to the TFR via the first contacts.

Example 16 may include the subject matter of Example 15, and may furtherspecify that the TFR is part of a calibration circuit.

Example 17 may include the subject matter of Example 15, and may furtherspecify that the bridge further includes: a capacitor between the firstand second faces.

Example 18 may include the subject matter of Example 15, and may furtherspecify that the TFR is one of a plurality of TFRs at the second face ofthe bridge.

Example 19 may include the subject matter of Example 18, and may furtherspecify that the die is a first die and the computing device furtherincludes: a second die coupled to one of the plurality of TFRs via thesecond contacts.

Example 20 may include the subject matter of Example 19, and may furtherspecify that the first die is a central processing unit and the seconddie is a graphics processing unit.

Example 21 may include the subject matter of Examples 15-20, and mayfurther specify that the computing device is a server device.

Example 22 may include the subject matter of Examples 15-20, and mayfurther specify that the computing device is a portable computingdevice.

Example 23 may include the subject matter of Examples 15-20, and mayfurther specify that the computing device is a wearable computingdevice.

Example 24 is an integrated circuit (IC) package, including: a packagesubstrate; a bridge, having opposing first and second faces, wherein thesecond face includes first contacts in a first interconnect area andsecond contacts in a second interconnect area, wherein the bridge isembedded in the package substrate, and wherein the bridge includes: aninsulating material between the first and second faces; a firstcapacitor, wherein a conductive portion of the first capacitor isdisposed on a first layer of the insulating material between the firstand second faces; and a second capacitor, wherein a conductive portionof the second capacitor is disposed on a second layer of the insulatingmaterial between the first and second faces; a first die coupled to thefirst capacitor via the first contacts; and a second die coupled to thesecond capacitor via the second contacts.

Example 25 may include the subject matter of Example 24, and may furtherspecify that the first layer and the second layer of the insulatingmaterial are different layers in the insulating material.

Example 26 may include the subject matter of Example 24, and may furtherspecify that the first layer and the second layer of the insulatingmaterial are a same layer in the insulating material.

Example 27 may include the subject matter of Example 24, and may furtherspecify that the first capacitor and the second capacitor are parallelplate capacitors.

Example 28 may include the subject matter of Example 24, and may furtherspecify that the first capacitor and the second capacitor are part of anarray of capacitors.

Example 29 may include the subject matter of Example 24, and may furtherspecify that the first capacitor is part of an input/output circuit inthe first die and the second capacitor is part of an input/outputcircuit in the second die.

Example 30 may include the subject matter of Example 24, and may furtherspecify that the bridge further includes a thin film resistor (TFR).

Example 31 may include the subject matter of Example 24, and may furtherspecify that the bridge further includes conductive pathways, that thesecond face of the bridge further includes third contacts in a thirdinterconnect area, and that the first die is coupled to the second dievia the third contacts and the conductive pathways in the bridge.

Example 32 may include the subject matter of Example 24, and may furtherspecify that the second face of the bridge further includes fourthcontacts in a fourth interconnect area, and the IC package furtherincludes a third die coupled to the bridge via the fourth contacts.

1. A microelectronic assembly, comprising: a substrate having a surface;a bridge, embedded in the substrate, having a plurality of capacitors,wherein one or more first capacitors of the plurality of capacitors areconnected to at least one other capacitor in the plurality of capacitorsand one or more second capacitors of the plurality of the capacitors arenot connected to another capacitor in the plurality of capacitors; and adie on the surface of the substrate connected to the one or more firstcapacitors of the plurality of capacitors.
 2. The microelectronicassembly of claim 1, wherein at least two or more first capacitors ofthe plurality of capacitors are connected to at least one othercapacitor in the plurality of capacitors.
 3. The microelectronicassembly of claim 1, further comprising: a parasitic resistanceconnected to the one or more first capacitors of the plurality ofcapacitors.
 4. The microelectronic assembly of claim 1, furthercomprising: a parasitic inductance connected to the one or more firstcapacitors of the plurality of capacitors.
 5. The microelectronicassembly of claim 1, wherein the plurality of capacitors is part of apower delivery network having a high-frequency current.
 6. Themicroelectronic assembly of claim 1, wherein the one or more firstcapacitors of the plurality of capacitors are configured to mitigateelectromagnetic interference (EMI) generated by the die.
 7. Themicroelectronic assembly of claim 1, wherein the die is a centralprocessing unit, a graphics processing unit, memory, platform controllerhub, memory, a voltage regulator, or an input/output interface.
 8. Amicroelectronic assembly, comprising: a substrate having a surface; abridge, embedded in the substrate, having a plurality of capacitors; anda die on the surface of the substrate, wherein the die is connected toone or more first capacitors of the plurality of capacitors and are notconnected to one or more second capacitors of the plurality of thecapacitors.
 9. The microelectronic assembly of claim 8, wherein the dieis connected to two or more first capacitors of the plurality ofcapacitors.
 10. The microelectronic assembly of claim 8, furthercomprising: a parasitic resistance connected to the one or more firstcapacitors of the plurality of capacitors.
 11. The microelectronicassembly of claim 8, further comprising: a parasitic inductanceconnected to the one or more first capacitors of the plurality ofcapacitors.
 12. The microelectronic assembly of claim 8, wherein theplurality of capacitors is part of a power delivery network having ahigh-frequency current.
 13. The microelectronic assembly of claim 8,wherein the one or more first capacitors of the plurality of capacitorsare configured to mitigate electromagnetic interference (EMI) generatedby the die.
 14. The microelectronic assembly of claim 8, wherein the dieis a central processing unit, a graphics processing unit, memory,platform controller hub, memory, a voltage regulator, or an input/outputinterface.
 15. An integrated circuit (IC) package, comprising: a packagesubstrate having a surface; a first bridge, embedded in the packagesubstrate, having a plurality of capacitors, wherein one or more firstcapacitors of the plurality of capacitors are connected to at least oneother capacitor in the plurality of capacitors and one or more secondcapacitors of the plurality of the capacitors are not connected toanother capacitor in the plurality of capacitors; a second bridge,embedded in the package substrate, having a plurality of thirdcapacitors connected to each other; and a die on the surface of thepackage substrate connected to the one or more first capacitors of theplurality of capacitors.
 16. The IC package of claim 15, furthercomprising: a parasitic resistance connected to the one or more firstcapacitors of the plurality of capacitors.
 17. The IC package of claim15, further comprising: a parasitic inductance connected to the one ormore first capacitors of the plurality of capacitors.
 18. The IC packageof claim 15, wherein the plurality of capacitors is part of a powerdelivery network having a high-frequency current.
 19. The IC package ofclaim 15, wherein the one or more first capacitors of the plurality ofcapacitors are configured to mitigate electromagnetic interference (EMI)generated by the die.
 20. The IC package of claim 15, wherein theplurality of capacitors are parallel plate capacitors.